jiangsu changjiang electronics technology co., ltd to-92 plastic-encap sulate transistors bc635 / BC637 / bc639 transistor ( npn ) features high current transistors maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-emitter voltage bc635 45 v BC637 60 v bc639 100 v v ceo collector-emitter voltage bc635 45 v BC637 60 v bc639 80 v v ebo emitter-base volt age 5 v i c collector current -continuous 1 a p c collector power dissipation 0. 83 w t j junction temperature 150 t st g storage temperature -65-150 to-92 1. emitter 2. collector 3. base www.cj-elec.com 1 f , aug ,201 7 ordering inform a t ion part nu mb er pack ag e packin g meth o d pack quantity t o -92 bulk 1000pcs/bag t o -92 t ape 2000pcs/box bc 635 bc 635 -ta t o-92 bulk 1000pcs/bag t o -92 t ape 2000pcs/box bc 637 bc 637 -ta t o-92 bulk 1000pcs/bag t o -92 t ape 2000pcs/box bc 6 39 bc 6 39 -ta solid dot=green molding compound device, ///, . bc 635 ,bc 637 ,bc 6 39 ,! - . if none,the normal device 1 bc 635 xxx 1 bc 637 xxx 1 bc 6 39 xxx equivalent circuit
www.cj-elec.com f,aug,2017 a t =25 unless otherwise specified p a rameter symbol test conditions min typ m ax unit i c =10ma, i b =0 bc6 3 5 45 v BC637 60 v collector-emitter br ea kdown voltage v (br)ceo bc639 80 v collector cut-o ff cu rrent i cbo v cb = 30 v,i e =0 0.1 a emitter cut-off current i ebo v eb =5v, i b =0 0.1 a h fe(1) v ce =2 v, i c = 5ma 25 h fe(2) v ce =2v, i c =150ma bc635 40 250 BC637-10/bc639-10 63 160 BC637-16/bc639-16 100 250 dc current ga in h fe(3) v ce =2v, i c = 500ma 25 collector-emitter satur atio n voltage v ce(sat) i c =500ma, i b =50ma 0.5 v base-emitter voltage v be v ce =2v, i c =500ma 1 v trans ition frequency f t v ce =5v, i c =10ma,f= 50 mh z 100 mhz
0.1 1 10 1 10 100 1000 0 2 04 0 6 08 0 1 0 0 0 50 100 150 200 250 1 10 100 1000 10 100 1000 0 25 50 75 100 125 150 0 200 400 600 800 1000 1200 0.1 1 10 100 1000 0 200 400 600 800 1000 10 100 1000 0 50 100 150 200 02 4681 0 0.0 0.1 0.2 0.3 0.4 0.5 200 400 600 800 1000 0.1 1 10 100 1000 f=1m hz i e =0 / i c =0 t a =25 o c reverse voltage v (v) capacitance c (pf) v cb / v eb c ob / c ib c ib c ob 20 transition freque ncy f t (mhz) collector current i c (ma) v ce =5v t a =25 o c i c f t v ce = 2v t a =100 o c t a =25 o c collector current i c (m a) dc current gain h fe i c h fe collector power dissipat io n p c (mw) ambient temperat ure t a ( ) p c t a collector current i c (m a) base- emitter saturati o n voltage v besat (mv) t a =25 t a =100 =10 i c v b esat t a =25 t a =100 =10 v c esat i c collector-emitter saturation voltage v ce sat (mv) collector current i c (m a) c ommon emitter t a =25 2m a 1.8m a 1.6m a 1.4m a 1.2m a 1m a 0.8m a 0.6m a 0.4m a i b =0.2m a collector-emitter voltage v ce (v) collector current i c (a) static ch aracteristic vce=2v ta=25 ta=100 o c base-emitter vo lt age v be (mv) collector current i c (m a) i c ??v be typical characteristics www.cj-elec.com 3 f,aug,2017
min max min max a 3. 300 3.700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d 4. 300 4.700 0.169 0.185 d1 3.430 0.135 e 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 symbol dimensions in millimeters dimensions in inches 1.270 typ 0.050 typ to-92 package outline dimensions to-92 suggested pad layout www.cj-elec.com 4 f,aug,2017
to-92 7 d s h d q g 5 h h o z z z f m h o h f f r p 5 f,aug,2017
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